GaN power devices & integrated circuits
A key innovation of this research project is the development of GaN power devices and integrated circuits that overcome the main limitations of today’s solutions, namely blocking voltage beyond 1.2 kV, high isolation capability, and thermal management. The project targets GaN power ICs rated at 1.7 kV and 10 A, implemented on insulating substrates such as SiC or sapphire to achieve more than 10 kV vertical isolation. This platform also enables an integrated isolated gate driver based on a patent-pending concept, while supporting direct mounting on a heatsink for improved thermal extraction. In addition, the technology is designed to facilitate the parallel operation of GaN devices, enabling higher current capability and scalable power conversion systems.
Fraunhofer Institute for Silicon Technology